Schottky-barrier-free contacts with two-dimensional semiconductors by surface-engineered MXenes
Yuanyue Liu, Hai Xiao, William A. Goddard III
Abstract
Two-dimensional (2D) metal carbides and nitrides, called MXenes, have attracted great interest for applications such as energy storage. Here we demonstrate their potential as Schottky-barrier-free metal contacts to 2D semiconductors, providing a solution to the contact-resistance problem in 2D electronics. Based on first principles calculations, we find that the surface chemistry strongly affects the Fermi level of MXenes: O termination always increases the work function with respect to that of bare surface, OH always decreases it, while F exhibits either trend depending on the specific material. This phenomenon originates from the effect of surface dipoles, which together with the weak Fermi level pinning, enable Schottky-barrier-free hole (or electron) injection into 2D semiconductors through van der Waals junctions with some of the O-terminated (or all the OH-terminated) MXenes. Furthermore, we suggest synthetic routes to control the surface terminations based on the calculated formation energies. This study enhances the understanding of the correlation between surface chemistry and electronic/transport properties of 2D materials, and also gives practical predictions for improving 2D electronics.
Group Members
Liu, Y., Xiao, H., & III, W. A. G. (2016). Schottky-barrier-free contacts with two-dimensional semiconductors by surface-engineered MXenes. *J. Am. Chem. Soc.*, *138*(49), 15853-15856. https://doi.org/10.1021/jacs.6b10834