Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation
William A. Goddard III, John J. Barton, Antonio Redondo, T. C. McGill
1978Journal of Vacuum Science and Technology, 15(4), 1274-128691cited
Abstract
Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O_2 on Si (111), and (v) the bonding of O atom to Ga and As centers.
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Cite this publication
III, W. A. G., Barton, J. J., Redondo, A., & McGill, T. C. (1978). Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation. *Journal of Vacuum Science and Technology*, *15*(4), 1274-1286. https://doi.org/10.1116/1.569753