Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang, Gang Qiu, Ruoxing Wang, Shouyuan Huang, Qingxiao Wang, Yuanyue Liu, Yuchen Du, William A. Goddard III, Moon J. Kim, Xianfan Xu, Peide D. Ye, Wenzhuo Wu
Abstract
The reliable production of two-dimensional (2D) crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a variety of drawbacks, including limitations in crystal size and stability. Here, we report the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process. Our approach can create crystals with process-tunable thickness, from a monolayer to tens of nanometres, and with lateral sizes of up to 100 µm. The chiral-chain van der Waals structure of tellurene gives rise to strong in-plane anisotropic properties and large thickness-dependent shifts in Raman vibrational modes, which is not observed in other 2D layered materials. We also fabricate tellurene field-effect transistors, which exhibit air-stable performance at room temperature for over two months, on/off ratios on the order of 106, and field-effect mobilities of about 700 cm^2 V^(−1) s^(−1). Furthermore, by scaling down the channel length and integrating with high-k dielectrics, transistors with a significant on-state current density of 1 A mm^(−1) are demonstrated.
Group Members
Wang, Y., Qiu, G., Wang, R., Huang, S., Wang, Q., Liu, Y., Du, Y., III, W. A. G., Kim, M. J., Xu, X., Ye, P. D., & Wu, W. (2018). Field-effect transistors made from solution-grown two-dimensional tellurene. *Nature Electronics*, *1*(4), 228-236. https://doi.org/10.1038/s41928-018-0058-4