Nanotwin-induced ductile mechanism in thermoelectric semiconductor PbTe
Min Huang, Pengcheng Zhai, Guodong Li, Qi An, Sergey I. Morozov, Wenjuan Li, Qingjie Zhang, William A. Goddard III
Abstract
Coherent twin boundaries (CTBs) with the lowest interfacial energy provide a strong phonon-CTB scattering source to suppress the lattice thermal conductivity needed for thermoelectric properties, but the impact on mechanical properties of PbTe remains unexplored. We construct nanotwinned structures with Pb- or Te-terminated CTB (Pb- or Te-CTB) along (111) plane and employ molecular dynamics simulations to examine structural evolution. We find that Pb-CTBs weaken ionic Pb-Te bonds to generate an easy dislocation source at CTBs. Due to nucleation and motion of partial dislocations on each Pb-CTB plane driven by shear load, Pb-CTBs gradually migrate to Te-CTBs, which is accompanied by breaking and re-forming of Pb-Te bonds. This "catching bond" maintains structural integrity while dramatically enhancing deformability of nanotwinned PbTe. Dislocations move from Te-CTBs toward twin lamellae, resulting in the structural slippage and fracture. These findings provide a theoretical strategy to improve the ductility of PbTe-based semiconductors through TB engineering.
Group Members
Huang, M., Zhai, P., Li, G., An, Q., Morozov, S. I., Li, W., Zhang, Q., & III, W. A. G. (2022). Nanotwin-induced ductile mechanism in thermoelectric semiconductor PbTe. *Matter*, *5*(6), 1839-1852. https://doi.org/10.1016/j.matt.2022.03.010