Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3.
Xiongyi Huang, X. Feng, Qi An, Ben Huang, X. Zhang, Z. Lu, G. Li, Pengcheng Zhai, Bo Duan, G. Jeffrey Snyder, William A. Goddard III, Q. Zhang
2023Matter, 6(9), 3087–3098
Cite this publication
Huang, X., Feng, X., An, Q., Huang, B., Zhang, X., Lu, Z., Li, G., Zhai, P., Duan, B., Snyder, G. J., III, W. A. G., & Zhang, Q. (2023). Stacking fault-induced strengthening mechanism in thermoelectric semiconductor Bi2Te3.. *Matter*, *6*(9), 3087–3098. https://doi.org/10.1016/j.matt.2023.07.017