Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface
Antonio Redondo, William A. Goddard III, T. C. McGill
1982Journal of Vacuum Science and Technology, 21(2), 328-3292cited
Abstract
Results of fully correlated theoretical ab initio calculations are reported [1] and compared with the following experiments: (i) Si(2p) core level shifts [2,3], (ii) the dispersion of dangling bond surfaces states [4], and (iii) angle-integrated ionization potentials (I.P.) from dangling bond orbials [5].
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Redondo, A., III, W. A. G., & McGill, T. C. (1982). Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface. *Journal of Vacuum Science and Technology*, *21*(2), 328-329. https://doi.org/10.1116/1.571772