Electronic correlation and the Si(100) surface: Buckling versus nonbuckling
Antonio Redondo, William A. Goddard III
1982Journal of Vacuum Science and Technology, 21(2), 344-345179cited
Abstract
Theoretical cluster calculations for the Si(100) surface show that the use of doubly occupied orbital wavefunctions, such as the closed-shell Hartree–Fock (HF), lead to an asymmetric dimer description of the surface. The inclusion of electron correlation produces a symmetric dimer description with a ground state [angle]1.0 eV below the minimum of the HF buckled dimer. There are two low-lying states of the symmetric dimer (a singlet and a triplet) with very different geometries. Energy minimization calculations indicate that a (2×1) structure is favored over a c(2×2) structure. We also report ionization potentials for surface and Si(2p) core electrons that are consistent with current experimental data.
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Cite this publication
Redondo, A. & III, W. A. G. (1982). Electronic correlation and the Si(100) surface: Buckling versus nonbuckling. *Journal of Vacuum Science and Technology*, *21*(2), 344-345. https://doi.org/10.1116/1.571778
