Shouldering in B diffusion profiles in Si: Role of di-boron diffusion
Gyeong S. Hwang, William A. Goddard III
2003Applied Physics Letters, 83(17), 3501-35038cited
Abstract
The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (B-s-B-i) diffusion can become as important as boron-interstitial pair (B-s-Si-i) diffusion when both boron concentration and annealing temperature are very high, leading to concentration-dependent B diffusion. Our simulated B diffusion profiles with dramatic shouldering are in excellent agreement with experimental ones reported by Schroer [Appl. Phys. Lett. 74, 3996 (1999)] for high-temperature (approximate to 1200 degrees C) postimplantion annealing of ultralow-energy (approximate to500 eV) implanted high-concentration (>10(19) cm(-3)) boron in silicon.
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Hwang, G. S. & III, W. A. G. (2003). Shouldering in B diffusion profiles in Si: Role of di-boron diffusion. *Applied Physics Letters*, *83*(17), 3501-3503. https://doi.org/10.1063/1.1619219