Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects.
Jamil Tahir-Kheli, M. Miyata, William A. Goddard III
2005Microelectronic Engineering, 80, 174–17710cited
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Tahir-Kheli, J., Miyata, M., & III, W. A. G. (2005). Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects.. *Microelectronic Engineering*, *80*, 174–177. https://doi.org/10.1016/j.mee.2005.04.031