The peroxy radical model for the chemisorption of O 2onto silicon surfaces.
William A. Goddard III, Antonio Redondo, T. C. McGill
1976Solid State Communications, 18(8), 981–984
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III, W. A. G., Redondo, A., & McGill, T. C. (1976). The peroxy radical model for the chemisorption of O 2onto silicon surfaces.. *Solid State Communications*, *18*(8), 981–984.