Relaxation of (111) silicon surface atoms from studies of Si4H9 clusters.
Antonio Redondo, William A. Goddard III, T. C. McGill, G.T. Surratt
1976Solid State Communications, 20(8), 733–73673cited
Group Members
Cite this publication
Redondo, A., III, W. A. G., McGill, T. C., & Surratt, G. (1976). Relaxation of (111) silicon surface atoms from studies of Si4H9 clusters.. *Solid State Communications*, *20*(8), 733–736. https://doi.org/10.1016/0038-1098(76)90282-9