A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications
Mei Xue, Sanaz Kabehie, Adam Z. Stieg, Ekaterina Tkatchouk, Diego Benítez, William A. Goddard III, Jeffrey I. Zink, Kang L. Wang
Abstract
A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10^4, a read window of about 2.5 V, and retention performance of greater than 10^4 s. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.
Group Members
Xue, M., Kabehie, S., Stieg, A. Z., Tkatchouk, E., Benítez, D., III, W. A. G., Zink, J. I., & Wang, K. L. (2010). A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications. *IEEE Electron Device Letters*, *31*(9), 1047-1049. https://doi.org/10.1109/led.2010.2052018